High power impulse magnetron sputtering (HIPIMS)
2007 (English)In: International Symposium on Reactive Sputter Deposition,2007, 2007Conference paper (Other academic)
High power impulse magnetron sputtering is an area presently under active and rapid development. Pulsing the power at low duty cycles allows for instantaneous high power levels to be used, causing the plasma to enter a new operating regime. Thus a plasma with a high plasma density is achieved increasing the ionization level of the sputtered material. This opens for several improvements in the deposition process in terms of the particle transport and alignment of the deposition flux as well as in the nucleation and growth of the film. The talk will highlight important aspects of process understanding and opportunities for improved process control and film growth. Examples from technologically relevant applications will be discussed. E.g., for low temperature growth of TiN it was shown that the intrinsic energy of the depositing species with energies exceeding values of 20~eV is sufficient for improved film quality. Moreover, biasing of the substrate during film deposition in pulsed mode provides an effective tool allowing growth under controlled ion impact conditions not normally available in a sputtering plasma and previously only available in cathodic arc plasmas. Ion impacts can be utilized - besides for controlling the film morphology and intrinsic stresses - for substrate cleaning and surface modification by ion implantation promoting epitaxial growth and good adhesion. In addition, results demonstrating an improvement in the stability of reactive sputtering processes by HIPIMS will be presented.
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IdentifiersURN: urn:nbn:se:liu:diva-40644Local ID: 53700OAI: oai:DiVA.org:liu-40644DiVA: diva2:261493