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Effective tuning of the charge-state of single In(Ga)As/GaAs quantum dots by below barrier band gap excitation
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .ORCID iD: 0000-0002-4547-6673
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2003 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 532-535, 843-847 p.Article in journal (Refereed) Published
Abstract [en]

The existence of a well-defined threshold energy, crucial for the charging of quantum dots (QDs), positioned between the barrier band gap and the wetting layer ground state is demonstrated. Optical excitation with energies above this threshold populates the QDs with extra electrons. The origin of the threshold is discussed in terms of acceptors in the GaAs barrier. ⌐ 2003 Elsevier Science B.V. All rights reserved.

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2003. Vol. 532-535, 843-847 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-40676DOI: 10.1016/S0039-6028(03)00481-3Local ID: 53855OAI: oai:DiVA.org:liu-40676DiVA: diva2:261525
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Karlsson, FredrikHoltz, Per-OlofMoskalenko, EvgeniiMonemar, Bo

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