Effective tuning of the charge-state of single In(Ga)As/GaAs quantum dots by below barrier band gap excitation
2003 (English)In: Surface Science, ISSN 0039-6028, Vol. 532-535, 843-847 p.Article in journal (Refereed) Published
The existence of a well-defined threshold energy, crucial for the charging of quantum dots (QDs), positioned between the barrier band gap and the wetting layer ground state is demonstrated. Optical excitation with energies above this threshold populates the QDs with extra electrons. The origin of the threshold is discussed in terms of acceptors in the GaAs barrier. ⌐ 2003 Elsevier Science B.V. All rights reserved.
Place, publisher, year, edition, pages
2003. Vol. 532-535, 843-847 p.
IdentifiersURN: urn:nbn:se:liu:diva-40676DOI: 10.1016/S0039-6028(03)00481-3Local ID: 53855OAI: oai:DiVA.org:liu-40676DiVA: diva2:261525