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Phonon-assisted photoluminescence in InGaN/GaN multiple quantum wells
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2002 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, Vol. 234, no 3, 755-758 p.Article in journal (Refereed) Published
Abstract [en]

The LO-phonon sidebands of the photoluminescence in InGaN/GaN multiple quantum wells has been investigated in the temperature range from 20 to 300 K. Analysing the intensity distribution among the phonon replicas, the strength of the exciton-phonon interaction has been estimated. The Huang-Rhys factor was found to be ÿ0.3, much larger than in GaN. The enhancement has been attributed to the exciton localization on a length scale smaller than the exciton Bohr radius and to the large internal electric field, which increases the spatial separation of the electron and hole charge densities along the growth axis.

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2002. Vol. 234, no 3, 755-758 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-40679DOI: 10.1002/1521-3951(200212)234:3<755::AID-PSSB755>3.0.CO;2-0Local ID: 53858OAI: oai:DiVA.org:liu-40679DiVA: diva2:261528
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2011-01-13

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Paskov, PlamenHoltz, Per-OlofMonemar, Bo

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