Anisotropy of the in-plane strain in GaN grown on A-plane sapphire
2002 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, Vol. 234, no 3, 892-896 p.Article in journal (Refereed) Published
A comparative study of GaN layer grown by hydride vapour phase epitaxy on A-plane sapphire before and after removal of the substrate is presented. A large anisotropy of the in-plane strain in the as-grown sample is revealed by X-ray diffraction measurements and polarized photoluminescence. The strain anisotropy is found to modify the selection rules for the transitions leading to a splitting of the optically active states of the A and B excitons. Almost complete strain relaxation and recovery of the optical isotropy in the (0001) plane is observed in the free-standing layer.
Place, publisher, year, edition, pages
2002. Vol. 234, no 3, 892-896 p.
IdentifiersURN: urn:nbn:se:liu:diva-40682DOI: 10.1002/1521-3951(200212)234:3<892::AID-PSSB892>3.0.COLocal ID: 53878OAI: oai:DiVA.org:liu-40682DiVA: diva2:261531