Up-converted photoluminescence (UPL) in InAs/GaAs self-assembled quantum dots (QDs) is reported. With a resonant excitation of QDs we observe an efficient emission from the GaAs barrier. The excitation spectrum of the UPL shows that the signal disappears if the excitation energy is tuned below the absorption band of the QDs. The intensity of UPL exhibits an almost quadratic dependence on the excitation intensity. The observed effect is explained by a two-step two-photon absorption process involving quantum dot states as intermediate states.