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Optical up-conversion processes in InAs quantum dots
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2000 (English)In: the 25th International Conference on the Physics of Semiconductors ICPS-25,2000, 2000, Vol. 40, 2080-2083 p.Conference paper, Published paper (Refereed)
Abstract [en]

Up-converted photoluminescence (UPL) in InAs/GaAs self-assembled quantum dots (QDs) is reported. With a resonant excitation of QDs we observe an efficient emission from the GaAs barrier. The excitation spectrum of the UPL shows that the signal disappears if the excitation energy is tuned below the absorption band of the QDs. The intensity of UPL exhibits an almost quadratic dependence on the excitation intensity. The observed effect is explained by a two-step two-photon absorption process involving quantum dot states as intermediate states.

Place, publisher, year, edition, pages
2000. Vol. 40, 2080-2083 p.
Series
Japanese Journal of Applied Physics, ISSN 0021-4922 ; 3B
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-40684DOI: 10.1143/JJAP.40.2080Local ID: 53880OAI: oai:DiVA.org:liu-40684DiVA: diva2:261533
Conference
25th International Conference on the Physics of Semiconductors ICPS-25, Osaka, Japan, 17-22 September 2000
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2015-02-26

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Paskov, PlamenHoltz, Per-OlofMonemar, Bo

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