Optical up-conversion processes in InAs quantum dots
2000 (English)In: the 25th International Conference on the Physics of Semiconductors ICPS-25,2000, 2000, Vol. 40, 2080-2083 p.Conference paper (Refereed)
Up-converted photoluminescence (UPL) in InAs/GaAs self-assembled quantum dots (QDs) is reported. With a resonant excitation of QDs we observe an efficient emission from the GaAs barrier. The excitation spectrum of the UPL shows that the signal disappears if the excitation energy is tuned below the absorption band of the QDs. The intensity of UPL exhibits an almost quadratic dependence on the excitation intensity. The observed effect is explained by a two-step two-photon absorption process involving quantum dot states as intermediate states.
Place, publisher, year, edition, pages
2000. Vol. 40, 2080-2083 p.
, Japanese Journal of Applied Physics, ISSN 0021-4922 ; 3B
IdentifiersURN: urn:nbn:se:liu:diva-40684DOI: 10.1143/JJAP.40.2080Local ID: 53880OAI: oai:DiVA.org:liu-40684DiVA: diva2:261533
25th International Conference on the Physics of Semiconductors ICPS-25, Osaka, Japan, 17-22 September 2000