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STM study of the C-induced Si(100)-c(4×4) reconstruction
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics. Linköping University, The Institute of Technology.
2002 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 65, no 11, 115321- p.Article in journal (Refereed) Published
Abstract [en]

We report a direct and reliable way to produce the Si(100)-c(4×4) reconstruction by submonolayer deposition from a SiC source and subsequent annealing. Auger electron spectroscopy, low-energy electron diffraction, and scanning tunneling microscopy (STM) investigations reveal that a C amount equivalent to 0.07 monolayers (ML’s) is sufficient to obtain full coverage of the c(4×4) reconstruction. A deposition of 0.035 ML’s C produces a c(4×4) coverage of only 19%, indicating that C is not only present in the c(4×4) areas, but also in the 2×1 areas. There is not enough C to make it a regular part of the c(4×4) reconstruction and we therefore conclude that the c(4×4) reconstruction is strain induced. We find that a combination of the mixed ad-dimer and buckled ad-dimer models explains all main features observed in the STM images. Images of freshly prepared c(4×4) surfaces exhibit a decoration of approximately 50% of the unit cells, which is attributed to perpendicular ad-dimers. Long exposures (>20 h) to the UHV background gas quench these features and the c(4×4) reconstruction appears as if more homogeneous.

Place, publisher, year, edition, pages
2002. Vol. 65, no 11, 115321- p.
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Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-40786DOI: 10.1103/PhysRevB.65.115321ISI: 000174548400090Local ID: 54114OAI: oai:DiVA.org:liu-40786DiVA: diva2:261635
Available from: 2013-03-27 Created: 2009-10-10 Last updated: 2017-12-13Bibliographically approved

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Zhang, HanminUhrberg, RogerHansson, Göran

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Department of Physics, Chemistry and BiologyThe Institute of TechnologySurface and Semiconductor Physics
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