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Defect related issues in the "current roll-off" in InGaN based light emitting diodes
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics .ORCID iD: 0000-0002-6281-868X
2007 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 91, 181103-1-181103-3 p.Article in journal (Refereed) Published
Abstract [en]

Defect related contributions to the reduction of the internal quantum efficiency of InGaN-based multiple quantum well light emitting diodes under high forward bias conditions are discussed. Screening of localization potentials for electrons is an important process to reduce the localization at high injection. The possible role of threading dislocations in inducing a parasitic tunneling current in the device is discussed. Phonon-assisted transport of holes via tunneling at defect sites along dislocations is suggested to be involved, leading to a nonradiative parasitic process enhanced by a local temperature rise at high injection.

Place, publisher, year, edition, pages
2007. Vol. 91, 181103-1-181103-3 p.
Keyword [en]
gallium compounds, III-V semiconductors, indium compounds, light emitting diodes, screw dislocations, semiconductor quantum wells, tunnelling, wide band gap semiconductors
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-40805DOI: 10.1063/1.2801704Local ID: 54157OAI: oai:DiVA.org:liu-40805DiVA: diva2:261654
Note
Original Publication: Bo Monemar and Bo Sernelius, Defect related issues in the "current roll-off" in InGaN based light emitting diodes, 2007, Applied Physics Letters, (91), 181103. http://dx.doi.org/10.1063/1.2801704 Copyright: American Institute of Physics http://www.aip.org/ Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2013-10-02

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