Defect related issues in the "current roll-off" in InGaN based light emitting diodes
2007 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 91, 181103-1-181103-3 p.Article in journal (Refereed) Published
Defect related contributions to the reduction of the internal quantum efficiency of InGaN-based multiple quantum well light emitting diodes under high forward bias conditions are discussed. Screening of localization potentials for electrons is an important process to reduce the localization at high injection. The possible role of threading dislocations in inducing a parasitic tunneling current in the device is discussed. Phonon-assisted transport of holes via tunneling at defect sites along dislocations is suggested to be involved, leading to a nonradiative parasitic process enhanced by a local temperature rise at high injection.
Place, publisher, year, edition, pages
2007. Vol. 91, 181103-1-181103-3 p.
gallium compounds, III-V semiconductors, indium compounds, light emitting diodes, screw dislocations, semiconductor quantum wells, tunnelling, wide band gap semiconductors
IdentifiersURN: urn:nbn:se:liu:diva-40805DOI: 10.1063/1.2801704Local ID: 54157OAI: oai:DiVA.org:liu-40805DiVA: diva2:261654
Bo Monemar and Bo Sernelius, Defect related issues in the "current roll-off" in InGaN based light emitting diodes, 2007, Applied Physics Letters, (91), 181103.
Copyright: American Institute of Physics