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Low-pressure sublimation epitaxy of AlN films - growth and characterization
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
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2004 (English)In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 76, 143-146 p.Article in journal (Refereed) Published
Abstract [en]

Epitaxial layers of aluminum nitride have been grown at temperatures 1900-2400degreesC on 10 x 10 mm(2) 4H-SiC substrate via sublimation recondensation in an RF heated graphite furnace. The source material was polycrystalline sintered AlN. A maximum growth rate of about 100 mum/h was achieved at 2400degreesC and seed to source distance of 1 mm. The surface morphology reflects the hexagonal symmetry of the seed suggesting an epitaxial growth. This was confirmed by X-ray diffraction (XRD). The spectra showed very strong and well-defined (0002) reflection position at around 36.04degrees in symmetric Theta-2Thetascans for all samples. Micro-Raman spectroscopy reveals that the films have a wurtzite structure. It is evidenced by the appearance of the A(1) (TO) (at 601 cm(-1)) and E-2((2)) (at 651 cm(-1)) lines in the spectra. Secondary-ion mass spectroscopy (SIMS) results showed a low concentration of carbon incorporation in the AlN films. A correlation between the growth conditions and properties of the AlN layers was established.

Place, publisher, year, edition, pages
2004. Vol. 76, 143-146 p.
Keyword [en]
AIN, sublimation, morphology, XRD, Raman
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-40881DOI: 10.1016/j.vacuum.2004.07.052Local ID: 54459OAI: oai:DiVA.org:liu-40881DiVA: diva2:261730
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Beshkova, MilenaBirch, JensKakanakova-Georgieva, AneliaYakimova, Rositsa

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Beshkova, MilenaBirch, JensKakanakova-Georgieva, AneliaYakimova, Rositsa
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