Low-pressure sublimation epitaxy of AlN films - growth and characterization
2004 (English)In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 76, 143-146 p.Article in journal (Refereed) Published
Epitaxial layers of aluminum nitride have been grown at temperatures 1900-2400degreesC on 10 x 10 mm(2) 4H-SiC substrate via sublimation recondensation in an RF heated graphite furnace. The source material was polycrystalline sintered AlN. A maximum growth rate of about 100 mum/h was achieved at 2400degreesC and seed to source distance of 1 mm. The surface morphology reflects the hexagonal symmetry of the seed suggesting an epitaxial growth. This was confirmed by X-ray diffraction (XRD). The spectra showed very strong and well-defined (0002) reflection position at around 36.04degrees in symmetric Theta-2Thetascans for all samples. Micro-Raman spectroscopy reveals that the films have a wurtzite structure. It is evidenced by the appearance of the A(1) (TO) (at 601 cm(-1)) and E-2((2)) (at 651 cm(-1)) lines in the spectra. Secondary-ion mass spectroscopy (SIMS) results showed a low concentration of carbon incorporation in the AlN films. A correlation between the growth conditions and properties of the AlN layers was established.
Place, publisher, year, edition, pages
2004. Vol. 76, 143-146 p.
AIN, sublimation, morphology, XRD, Raman
IdentifiersURN: urn:nbn:se:liu:diva-40881DOI: 10.1016/j.vacuum.2004.07.052Local ID: 54459OAI: oai:DiVA.org:liu-40881DiVA: diva2:261730