Enhancement of the luminescence intensity of InAs/GaAs quantum dots induced by an external electric field
2007 (English)In: Nano letters (Print), ISSN 1530-6984, Vol. 7, no 1, 188-193 p.Article in journal (Refereed) Published
InAs/GaAs quantum dots have been subjected to a lateral external electric field in low-temperature microphotoluminescence measurements. It is demonstrated that the dot PL signal could be increased several times depending on the magnitude of the external field and the strength of the internal (built-in) electric field, which could be altered by an additional infrared illumination of the sample. The observed effects are explained by a model that accounts for the essentially faster lateral transport of the photoexcited carriers achieved in an electric field. © 2007 American Chemical Society.
Place, publisher, year, edition, pages
2007. Vol. 7, no 1, 188-193 p.
IdentifiersURN: urn:nbn:se:liu:diva-40892DOI: 10.1021/nl062417uLocal ID: 54474OAI: oai:DiVA.org:liu-40892DiVA: diva2:261741