Recombination centers in as-grown and electron-irradiated ZnO substrates
2007 (English)In: Journal of Applied Physics, ISSN 0021-8979, Vol. 102, no 9Article in journal (Refereed) Published
Optical detection of magnetic resonance (ODMR) was used to study defects in ZnO substrates irradiated with 3 MeV electrons at room temperature. The Zn vacancy and some other ODMR centers were detected. Among these, the Zn vacancy and two other centers, labeled as LU3 and LU4, were also commonly observed in different types of as-grown ZnO substrates. The LU3 and LU4 are related to intrinsic defects and act as dominating recombination centers in irradiated and as-grown ZnO. © 2007 American Institute of Physics.
Place, publisher, year, edition, pages
2007. Vol. 102, no 9
IdentifiersURN: urn:nbn:se:liu:diva-41155DOI: 10.1063/1.2802186Local ID: 55275OAI: oai:DiVA.org:liu-41155DiVA: diva2:262006