Clustering of vacancy defects in high-purity semi-insulating SiC
2007 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 75, no 8, 085208- p.Article in journal (Refereed) Published
Positron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain (i) vacancy clusters consisting of four to five missing atoms and (ii) Si-vacancy-related negatively charged defects. The total open volume bound to the clusters anticorrelates with the electrical resistivity in both as-grown and annealed materials. Our results suggest that Si-vacancy-related complexes electrically compensate the as-grown material, but migrate to increase the size of the clusters during annealing, leading to loss of resistivity. © 2007 The American Physical Society.
Place, publisher, year, edition, pages
2007. Vol. 75, no 8, 085208- p.
IdentifiersURN: urn:nbn:se:liu:diva-41156DOI: 10.1103/PhysRevB.75.085208Local ID: 55276OAI: oai:DiVA.org:liu-41156DiVA: diva2:262007