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Theoretical study of small silicon clusters in 4H-SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
2007 (English)Article in journal (Refereed) Published
Abstract [en]

We have studied the small clusters of silicon and carbon interstitials by ab initio supercell calculations in 4H-SiC. We found that silicon interstitials can form stable and electrically active complexes with each other or with a carbon interstitial. Local vibration modes and ionization energies were also calculated in order to help the identification of the defects. We propose that silicon interstitials can emit from these clusters at relatively high temperatures, which may play an important role in the formation of the DI center. © 2007 The American Physical Society.

Place, publisher, year, edition, pages
2007. Vol. 76, no 16
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-41157DOI: 10.1103/PhysRevB.76.165209Local ID: 55277OAI: oai:DiVA.org:liu-41157DiVA: diva2:262008
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2011-01-11

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Nguyen, Son TienJanzén, Erik

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