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Antisites as possible origin of irradiation induced photoluminescence centers in SiC: A theoretical study on clusters of antisites and carbon interstitials in 4H-SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2004 (English)In: Mater. Sci. Forum, Vol. 457-460, Trans Tech Publications Inc. , 2004, 443- p.Conference paper, Published paper (Refereed)
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Trans Tech Publications Inc. , 2004. 443- p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-41206Local ID: 55342OAI: oai:DiVA.org:liu-41206DiVA: diva2:262057
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ICSCRM2003
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2010-12-15

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Gali, AdamNguyen, Son TienIvanov, Ivan GueorguievCarlsson, FredrikJanzén, Erik

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Gali, AdamNguyen, Son TienIvanov, Ivan GueorguievCarlsson, FredrikJanzén, Erik
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