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Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2004 (English)In: Materials Science Forum, Vols. 457-460, Trans Tech Publications Inc. , 2004, p. 193-Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
Trans Tech Publications Inc. , 2004. p. 193-
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Natural Sciences
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URN: urn:nbn:se:liu:diva-41238Local ID: 55385OAI: oai:DiVA.org:liu-41238DiVA, id: diva2:262089
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ICSCRM2003
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2010-12-15

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Hallin, ChristerWahab, Qamar UlIvanov, Ivan GueorguievBergman, PederJanzén, Erik

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Hallin, ChristerWahab, Qamar UlIvanov, Ivan GueorguievBergman, PederJanzén, Erik
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The Institute of TechnologyDepartment of Physics, Chemistry and BiologySemiconductor Materials
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