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Characterization and comparison of 4H-SiC(112 over-bar 0) and 4H-SiC(0001) 8° off-axis substrates and homoepitaxial films
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
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2004 (English)In: Materials Research Society Symposium Proceedings, Vol. 815 Silicon Carbide 2004 - Materials, Processing and Devices,2004, 2004, 53-58 p.Conference paper, Published paper (Other academic)
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2004. 53-58 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-41246Local ID: 55395OAI: oai:DiVA.org:liu-41246DiVA: diva2:262097
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Materials Research Society Symposium
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2014-10-08

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Hallin, ChristerHenry, AnneStorasta, LiutaurasJacobson, HenrikJanzén, Erik

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Hallin, ChristerHenry, AnneStorasta, LiutaurasJacobson, HenrikJanzén, Erik
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The Institute of TechnologyDepartment of Physics, Chemistry and BiologySemiconductor Materials
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