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Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
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2006 (English)In: Mater. Sci. Forum, Vol. 527-529, Trans Tech Publications , 2006, p. 141-Conference paper, Published paper (Refereed)
Abstract [en]

  

Place, publisher, year, edition, pages
Trans Tech Publications , 2006. p. 141-
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Natural Sciences
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URN: urn:nbn:se:liu:diva-41304Local ID: 55460OAI: oai:DiVA.org:liu-41304DiVA, id: diva2:262156
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ICSCRM2005
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2010-12-15

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Bergman, PederHallin, ChristerJanzén, Erik

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Bergman, PederHallin, ChristerJanzén, Erik
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The Institute of TechnologySemiconductor MaterialsDepartment of Physics, Chemistry and Biology
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