Strain evolution and phonons in AlN/GaN superlattices
2003 (English)Article in journal (Refereed) Published
AlN/GaN superlattices (SLs) with different periods grown on GaN buffer layers were studied by infrared spectroscopic ellipsometry (IRSE), Raman scattering (RS) and high-resolution reciprocal space mapping (RSM). The lattice parameters and the degree of strain in the GaN buffer and the SL constituents were determined. Phonon modes originating from the buffer layer and the SL sublayers were identified and their frequency shifts were correlated with the strain state of the films.
Place, publisher, year, edition, pages
2003. Vol. 798, 741-746 p.
IdentifiersURN: urn:nbn:se:liu:diva-41344Local ID: 55597OAI: oai:DiVA.org:liu-41344DiVA: diva2:262196