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Strain evolution and phonons in AlN/GaN superlattices
IFM Linköpings universitet.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Fakultät für Physik und Geowissenshaften Universität Leipzig.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
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2003 (English)Article in journal (Refereed) Published
Abstract [en]

AlN/GaN superlattices (SLs) with different periods grown on GaN buffer layers were studied by infrared spectroscopic ellipsometry (IRSE), Raman scattering (RS) and high-resolution reciprocal space mapping (RSM). The lattice parameters and the degree of strain in the GaN buffer and the SL constituents were determined. Phonon modes originating from the buffer layer and the SL sublayers were identified and their frequency shifts were correlated with the strain state of the films.

Place, publisher, year, edition, pages
2003. Vol. 798, 741-746 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-41344Local ID: 55597OAI: oai:DiVA.org:liu-41344DiVA: diva2:262196
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2013-10-14

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Paskov, PlamenPaskova, TanjaArwin, HansMonemar, Bo

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