Effects of stoichiometry on defect formation in ZnO epilayers grown by molecular-beam epitaxy: An optically detected magnetic resonance study
2008 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 103, no 2, 023712- p.Article in journal (Refereed) Published
Photoluminescence (PL) and optically detected magnetic resonance are employed to study effects of nonstoichiometry during the growth on defect formation in ZnO epilayers grown by molecular-beam epitaxy (MBE). Several defects are revealed via monitoring the yellow PL emission (∼2.17 eV) and their magnetic resonance signatures are obtained. The defects are concluded to be common for the MBE growth and are facilitated during the off-stoichiometric growth conditions, especially under excess of oxygen. © 2008 American Institute of Physics.
Place, publisher, year, edition, pages
2008. Vol. 103, no 2, 023712- p.
National CategoryNatural Sciences Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-41903DOI: 10.1063/1.2833434Local ID: 59338OAI: oai:DiVA.org:liu-41903DiVA: diva2:262758