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High Energy Optical Transitions in Ga(PN): Contribution from Perturbed Valence Band
INFM, Università “La Sapienza”, Roma, Italy .
INFM, Università “La Sapienza”, Roma, Italy .
INFM, Università “La Sapienza”, Roma, Italy .
National Renewable Energy Laboratory, Golden, CO, USA.
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2005 (English)In: AIP Conference Proceedings / Volume 772: PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27 / [ed] José Menéndez, Chris G. Van de Walle, American Institute of Physics (AIP), 2005, 265- p.Conference paper (Refereed)
Abstract [en]

The GaP1–xNx conduction band is investigated experimentally (by excitation photoluminescence) andtheoretically (by pseudopotential supercells) for N concentrations up to x=3.5%and photon energies ranging from the optical absorption edge to3.2 eV. With increasing x: (i) a direct-like absorption edgedevelops smoothly and red-shifts rapidly overtaking energy-pinned cluster states; (ii)a broad absorption plateau appears between the X1c and the1c critical points of GaP; (iii) the 1c absorption edgebroadens and gradually disappears. Empirical pseudopotential calculations for GaP1-xNx randomalloy supercells account well for all the PLE results byconsidering N induced changes in the valence band overlooked sofar. ©2005 American Institute of Physics

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2005. 265- p.
, AIP Conference Proceedings, ISSN 0094-243X ; 772
National Category
Natural Sciences Condensed Matter Physics
URN: urn:nbn:se:liu:diva-41909DOI: 10.1063/1.1994094Local ID: 59358ISBN: 0-7354-0257-4OAI: diva2:262764
27th Int. Conf. on the Physics of Semicond.,2004,Flagstaff, Arizona, USA, 26-30 July 2004
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2013-10-02

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