liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Deep Levels Responsible for Semi-insulating Behaviour in Vanadium-doped 4H-SiC Substrates
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Show others and affiliations
2009 (English)In: Materials Science Forum, Vols. 600-603, Trans Tech Publications , 2009, 401-404 p.Conference paper, Published paper (Refereed)
Abstract [en]

Semi-insulating (SI) 4H-SiC substrates doped with vanadium (V) in the range 5.5×1015 –1.1×1017 cm–3 were studied by electron paramagnetic resonance. We show that only in heavily V-doped 4H-SiC vanadium is responsible for the SI behavior, whereas in moderate V-doped substrates with the V concentration comparable or slightly higher than that of the shallow N donor or B acceptor, the SI properties are thermally unstable and determined by intrinsic defects. The results show that the commonly observed thermal activation energy Ea~1.1 eV in V-doped 4H-SiC, which was previously assigned to the single acceptor V4+/3+ level, may be related to deep levels of the carbon vacancy. Carrier compensation processes involving deep levels of V and intrinsic defects are discussed and possible thermal activation energies are suggested.

Place, publisher, year, edition, pages
Trans Tech Publications , 2009. 401-404 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-41957DOI: 10.4028/www.scientific.net/MSF.600-603.401Local ID: 59416OAI: oai:DiVA.org:liu-41957DiVA: diva2:262812
Conference
12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007; Otsu; Japan
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2014-09-12

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Nguyen, Son TienCarlsson, PatrickGällström, AndreasMagnusson, BjörnJanzén, Erik

Search in DiVA

By author/editor
Nguyen, Son TienCarlsson, PatrickGällström, AndreasMagnusson, BjörnJanzén, Erik
By organisation
The Institute of TechnologySemiconductor Materials
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 69 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf