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EPR Identification of Defects and Impurities in SiC: To Be Decisive
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2009 (English)In: Materials Science Forum, Vols. 600-603, Trans Tech Publications , 2009, 279-284 p.Conference paper (Refereed)
Abstract [en]

In EPR (electron paramagnetic resonance) identification of point defects, hyperfine (HF) interaction is decisive information not only for chemical identity but also for the local geometry and the electronic state. In some intrinsic defects in SiC, the wave function of the unpaired electron extends quite unevenly among major atoms comprising the defects. In such a case, the determination of the number of equivalent atoms and the chemical identity (Si or C) of those atoms even with weak HF splitting are useful to compare with HF parameters obtained theoretically. For vacancy-related defects of relatively deep levels, the sum of the spin densities on the nearest-neighbor shell is found to be 60-68%.

Place, publisher, year, edition, pages
Trans Tech Publications , 2009. 279-284 p.
National Category
Natural Sciences
URN: urn:nbn:se:liu:diva-41962DOI: 10.4028/ ID: 59422OAI: diva2:262817
12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007; Otsu; Japan


Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2014-09-12

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Nguyen, Son TienJanzén, Erik
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