liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
EPR Identification of Defects and Impurities in SiC: To Be Decisive
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Show others and affiliations
2009 (English)In: Materials Science Forum, Vols. 600-603, Trans Tech Publications , 2009, 279-284 p.Conference paper (Refereed)
Abstract [en]

In EPR (electron paramagnetic resonance) identification of point defects, hyperfine (HF) interaction is decisive information not only for chemical identity but also for the local geometry and the electronic state. In some intrinsic defects in SiC, the wave function of the unpaired electron extends quite unevenly among major atoms comprising the defects. In such a case, the determination of the number of equivalent atoms and the chemical identity (Si or C) of those atoms even with weak HF splitting are useful to compare with HF parameters obtained theoretically. For vacancy-related defects of relatively deep levels, the sum of the spin densities on the nearest-neighbor shell is found to be 60-68%.

Place, publisher, year, edition, pages
Trans Tech Publications , 2009. 279-284 p.
National Category
Natural Sciences
URN: urn:nbn:se:liu:diva-41962DOI: 10.4028/ ID: 59422OAI: diva2:262817
12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007; Otsu; Japan


Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2014-09-12

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Nguyen, Son TienJanzén, Erik
By organisation
The Institute of TechnologySemiconductor Materials
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 11 hits
ReferencesLink to record
Permanent link

Direct link