Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material
2009 (English)In: Materials Science Forum Vols. 600-603, Trans Tech Publications , 2009, 405-408 p.Conference paper (Refereed)
The novel technique microwave detected photo induced current transient spectroscopy (MD-PICTS) was applied to semi-insulating 6H-SiC in order to investigate the properties of inherent defect levels. Defect spectra can be obtained in the similar way to conventional PICTS and DLTS. However, there is no need for contacting the samples, which allows for non-destructive and spatially resolved electrical characterization. This work is focused on the investigation of semi-insulating 6H-SiC grown under different C/Si-ratios. In the corresponding MD-PICTS spectra several shallow defect levels appear in the low temperature range. However the peak assignment needs further investigation. Additionally different trap reemission dynamics are obtained for higher temperatures, which are supposed to be due to different compensation effects.
Place, publisher, year, edition, pages
Trans Tech Publications , 2009. 405-408 p.
Natural Sciences Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-41964DOI: 10.4028/www.scientific.net/MSF.600-603.405Local ID: 59424OAI: oai:DiVA.org:liu-41964DiVA: diva2:262819
12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007; Otsu; Japan