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Wave-Function Symmetry and the Properties of Shallow P Donors in 4H SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2009 (English)In: Materials Science Forum, Vols. 600-603, Trans Tech Publications , 2009, 445-448 p.Conference paper, Published paper (Refereed)
Abstract [en]

A new investigation on the optical properties of the phosphorus-bound excitons is presented. Arguments are given in favor of the possibility of degenerate donor state for phosphorus substituting Si atom on hexagonal site. On the base of a simple model, it is shown that the experimental spectra also provide evidence in favor of this possibility. The possibility for violation of the Haynes rule in the case of phosphorus donors on the two inequivalent sites is indicated.

Place, publisher, year, edition, pages
Trans Tech Publications , 2009. 445-448 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-41966DOI: 10.4028/www.scientific.net/MSF.600-603.445Local ID: 59426OAI: oai:DiVA.org:liu-41966DiVA: diva2:262821
Conference
12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007; Otsu; Japan
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2014-10-08

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Ivanov, Ivan GueorguievHenry, AnneJanzén, Erik

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