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Titanium Related Luminescence in SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2009 (English)In: ICSCRM2007,2007, Materials Science Forum, Vols. 600-603: Trans Tech Publications , 2009, 461-464 p.Conference paper, Published paper (Refereed)
Abstract [en]

We report on the luminescence spectra related to Ti impurity in both 4H- and 6H-SiC polytypes. The spectrum depends strongly on the polarization. They are two families of lines in 4H and three in 6H. The main no-phonon line of each family is shown as a triplet and its phonon structure contains both sharp and broad replicas. The higher energy family has also extra lines at high energy appearing when the temperature increases. The spectra can be detected with excitation energy below the excitonic bandgap and even with excitation energy below the spectrum itself. Time-resolved photoluminescence reveals 0.1 ms long lifetime at low temperature.

Place, publisher, year, edition, pages
Materials Science Forum, Vols. 600-603: Trans Tech Publications , 2009. 461-464 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-41967DOI: 10.4028/www.scientific.net/MSF.600-603.461Local ID: 59427OAI: oai:DiVA.org:liu-41967DiVA: diva2:262822
Conference
12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007; Otsu; Japan
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2014-10-08

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Henry, AnneBergman, PederJanzén, Erik

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