The Electronic Structure of the UD-4 defect in 4H, 6H and 15R SiC
2009 (English)In: Materials Science Forum, Vols. 600-603, Trans Tech Publications , 2009, 397-400 p.Conference paper (Refereed)
The photoluminescence (PL) of the UD-4 defect is observed in semi-insulating bulk 4H, 6H and 15R SiC. In 4H and 6H SiC the UD-4 defect consists of two families of no-phonon (NP) lines, Ua and Ub, and in 15R SiC it consists of three families, Ua, Ub and U15R. The Ua family in 4H, 6H and 15R all show similar temperature behavior with higher energy NP lines becomming observable at higher temperatures. In the case of the Ub and U15R families, a luminescence line with lower energy than the prominent luminescence line appears at higher temperatures. The polarization and Zeeman measurements suggest that the defect has C3v symmetry.
Place, publisher, year, edition, pages
Trans Tech Publications , 2009. 397-400 p.
, Materials Science Forum, ISSN 1662-9752 ; 600-603
IdentifiersURN: urn:nbn:se:liu:diva-41968DOI: 10.4028/www.scientific.net/MSF.600-603.397Local ID: 59428OAI: oai:DiVA.org:liu-41968DiVA: diva2:262823
ICSCRM 2007, Otsu, Japan October 14-19, 2007