Buckling of ZnO nanowires under uniaxial compression
2008 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Applied Physics Letters, Vol. 92, no 10, 103118- p.Article in journal (Refereed) Published
Instability and buckling characterization of vertical well aligned single crystal of ZnO nanowires grown on SiC substrate was done quantitatively by nanoindentation technique. The critical load was found to be 477 μN and the corresponding buckling energy was 3.46× 10-11 J. Based on the Euler model for long nanowire and Johnson model which is an extension of the Euler model for intermediate nanowire, the modulus of elasticity of single wire was calculated. Also, the critical buckling stress and strain were determined for the as grown single wire of ZnO. We found how the modulus of elasticity is dependent on the slenderness ratio. © 2008 American Institute of Physics.
Place, publisher, year, edition, pages
2008. Vol. 92, no 10, 103118- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-42104DOI: 10.1063/1.2894184Local ID: 60573OAI: oai:DiVA.org:liu-42104DiVA: diva2:262959