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Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4- SiC substrate
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0002-9840-7364
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0002-2597-3322
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2008 (English)In: 8th International Conference on Physics of Light-Matter Coupling in Nanostructures,2008, 2008Conference paper, Published paper (Other academic)
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2008.
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URN: urn:nbn:se:liu:diva-42154Local ID: 60915OAI: oai:DiVA.org:liu-42154DiVA: diva2:263009
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2016-08-31

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Pozina, GaliaHemmingsson, CarlForsberg, UrbanLundskog, AndersKakanakova-Georgieva, AneliaIvanov, Ivan GueorguievMonemar, BoHultman, LarsJanzén, Erik

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Pozina, GaliaHemmingsson, CarlForsberg, UrbanLundskog, AndersKakanakova-Georgieva, AneliaIvanov, Ivan GueorguievMonemar, BoHultman, LarsJanzén, Erik
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The Institute of TechnologySemiconductor MaterialsThin Film Physics
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