Luminescence of GaN layers grown in nonpolar directions
2008 (English)In: Nitrides with nonpolar surfaces: growth, properties, and devices / [ed] Tanya Paskova., Weinheim: Wiley , 2008, 1, 185-217 p.Chapter in book (Other academic)
This is the first monograph to discuss in detail the current stage of development of nonpolar nitrides, with specific emphasis on the three main topics of crystal growth, properties and device studies. World-class researchers summarize their own recent achievements in their respective fields of expertise, covering both nonpolar and semipolar nitride materials. The bulk of the discussion in each chapter is related to the physical properties of the material obtained by the respective technique, in particular, defect density and properties of the defects in nonpolar nitrides. In addiiton, the optical and vibrational properties are also addressed in several chapters, as is progress in heterostructures, quantum wells and dots based on the AlGaN/GaN and the InGaN/GaN systems. Finally, an outlook of the application areas of the differently grown materials is presented in most chapters, together with the capabilities and limitations of the respective growth approaches used.
Place, publisher, year, edition, pages
Weinheim: Wiley , 2008, 1. 185-217 p.
IdentifiersURN: urn:nbn:se:liu:diva-42155Local ID: 60917ISBN: 352-74-076-85ISBN: 978-3527-407-682OAI: oai:DiVA.org:liu-42155DiVA: diva2:263010