liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Optical phonons in a-plane GaN under anisotropic strain
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
2008 (English)In: Group-III nitrides with nonpolar surfaces: growth, properties and devices / [ed] Tanya Paskova, Wiley , 2008, 1, 219-253 p.Chapter in book (Other academic)
Abstract [en]

This is the first monograph to discuss in detail the current stage of development of nonpolar nitrides, with specific emphasis on the three main topics of crystal growth, properties and device studies. World–class researchers summarize their own recent achievements in their respective fields of expertise, covering both nonpolar and semipolar nitride materials. The bulk of the discussion in each chapter is related to the physical properties of the material obtained by the respective technique, in particular, defect density and properties of the defects in nonpolar nitrides. In addiiton, the optical and vibrational properties are also addressed in several chapters, as is progress in heterostructures, quantum wells and dots based on the AlGaN/GaN and the InGaN/GaN systems. Finally, an outlook of the application areas of the differently grown materials is presented in most chapters, together with the capabilities and limitations of the respective growth approaches used.

Place, publisher, year, edition, pages
Wiley , 2008, 1. 219-253 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-42411Local ID: 63799ISBN: 978-35-2740-768-2 (print)ISBN: 3-527-40-768-5 OAI: oai:DiVA.org:liu-42411DiVA: diva2:263268
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2013-05-24Bibliographically approved

Open Access in DiVA

No full text

Other links

find book at a swedish library/hitta boken i ett svenskt biblioteklink

Authority records BETA

Darakchieva, VanyaPaskova, Tanja

Search in DiVA

By author/editor
Darakchieva, VanyaPaskova, Tanja
By organisation
The Institute of TechnologySemiconductor MaterialsDepartment of Physics, Chemistry and Biology
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

isbn
urn-nbn

Altmetric score

isbn
urn-nbn
Total: 44 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf