Strain and compositional analyzes of Al-rich Al1-xInxN alloys grown by MOVPE: impact on the applicability of Vegard's rule
2008 (English)In: Physica Status Solidi (C) Current Topics in Solid State Physics, 2008, 1859-1862 p.Conference paper (Refereed)
We have studied composition and strain in Al1–xInxN films with 0.128≤ x≤ 0.22 grown on GaN-buffered sapphire substrates by metalorganic vapor phase epitaxy. A good agreement between the In contents determined by Rutherford backscattering spectrometry (RBS) and Xray diffraction (XRD) is found for x≤ 18, suggesting applicability of Vegard's rule in the narrow compositional range around the lattice matching to GaN. The increase of the In content up to x = 0.22 leads to a formation of sub-layers with a higher composition, accompanied by deviations from Vegard's rule. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Place, publisher, year, edition, pages
2008. 1859-1862 p.
IdentifiersURN: urn:nbn:se:liu:diva-42414DOI: 10.1002/pssc.200778706Local ID: 63819OAI: oai:DiVA.org:liu-42414DiVA: diva2:263271
7th Int. Conference on Nitride Semiconductors ICNS-7,2007