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Strain and compositional analyzes of Al-rich Al1-xInxN alloys grown by MOVPE: impact on the applicability of Vegard's rule
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0002-2837-3656
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2008 (English)In: Physica Status Solidi (C) Current Topics in Solid State Physics, 2008, 1859-1862 p.Conference paper, Published paper (Refereed)
Abstract [en]

We have studied composition and strain in Al1–xInxN films with 0.128 x 0.22 grown on GaN-buffered sapphire substrates by metalorganic vapor phase epitaxy. A good agreement between the In contents determined by Rutherford backscattering spectrometry (RBS) and Xray diffraction (XRD) is found for x 18, suggesting applicability of Vegard's rule in the narrow compositional range around the lattice matching to GaN. The increase of the In content up to x = 0.22 leads to a formation of sub-layers with a higher composition, accompanied by deviations from Vegard's rule. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Place, publisher, year, edition, pages
2008. 1859-1862 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-42414DOI: 10.1002/pssc.200778706Local ID: 63819OAI: oai:DiVA.org:liu-42414DiVA: diva2:263271
Conference
7th Int. Conference on Nitride Semiconductors ICNS-7,2007
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2016-08-31

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Darakchieva, VanyaBeckers, ManfredHultman, LarsXie, MengyaoMonemar, Bo

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