Nonpolar GaN layers grown by sidewall epitaxial lateral overgrowth: optical evidences for a reduced stacking fault density
2008 (English)In: Proc. of the 7th International Conference on Nitride Semiconductors,2007, Linköping: Department of Physics, Chemistry and Biology, Linköping University , 2008, 1768-1770 p.Conference paper (Refereed)
Nonpolar a -plane and m -plane GaN layers grown by MOCVD employing sidewall epitaxial lateral overgrowth (SELO) are studied by photoluminescence (PL) and spatially resolved micro-PL. The effects of the groove orientations and the groove/terrace width ratio on the emission spectra, particularly on the stacking fault (SF) related emission bands in the 3.29–3.42 eV spectral region, are examined. The PL spectra of both types of nonpolar layers reveal a significant reduction of the defect related emissions when the grooves are oriented perpendicular to the c-axis of GaN and the groove/terrace width ratio is smaller than one. The suppression of SF formation in the areas where a lateral overgrowth along the  GaN direction occurs is confirmed by micro-PL measurements showing no SF related emissions over the terrace regions. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Place, publisher, year, edition, pages
Linköping: Department of Physics, Chemistry and Biology, Linköping University , 2008. 1768-1770 p.
IdentifiersURN: urn:nbn:se:liu:diva-42556DOI: 10.1002/pssc.200778632Local ID: 65899OAI: oai:DiVA.org:liu-42556DiVA: diva2:263413
7th International Conference on Nitride Semiconductors (ICNS-7)