Monitoring the a to B-phase transition in MnAs/GaAs(001) thin films as funcion of temperature
2008 (English)In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, Vol. 205, no 4, 863-866 p.Article in journal (Refereed) Published
MnAs layers with a 5 nm thick amorphous GaAs capping layer were grown epitaxially on GaAs(001). Generalized ellipsometric measurements were made on a 45 nm thick layer in the spectral range 1.5–4 eV at temperatures between –10 °C and 50 °C in steps of 5 °C. By using both the diagonal and off-diagonal elements of the Jones matrix, the in-plane unixial anisotropy of MnAs was determined in terms of the ordinary and extraordinary complex dielectric functions. The measurements at each temperature could be well reproduced by modeling using the optical properties of the two limiting phases α-MnAs and β-MnAs determined at –10 °C and 50 °C, respectively. The best sensitivity to the volume fractions of the two phases was obtained near 2.2 eV by monitoring the generalized ellipsometric parameter Δp for which the variations reached 30°.
Place, publisher, year, edition, pages
Wiley-VCH Verlagsgesellschaft, 2008. Vol. 205, no 4, 863-866 p.
National CategoryNatural Sciences
IdentifiersURN: urn:nbn:se:liu:diva-42728DOI: 10.1002/pssa.200777783ISI: 000255702600034Local ID: 68440OAI: oai:DiVA.org:liu-42728DiVA: diva2:263585
4th International Conference on Spectroscopic Ellipsometry (ICSE 4), Stockholm, Sweden, 11–15 June 2007