liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Monitoring the a to B-phase transition in MnAs/GaAs(001) thin films as funcion of temperature
Inst des NanoSciences de Paris - CNRS, Université Pierre et Marie Curie, France.
Inst des NanoSciences de Paris - CNRS, Université Pierre et Marie Curie, France.
Linköping University, Department of Physics, Chemistry and Biology, Applied Optics . Linköping University, The Institute of Technology.ORCID iD: 0000-0001-9229-2028
Inst des NanoSciences de Paris - CNRS, Université Pierre et Marie Curie, France.
Show others and affiliations
2008 (English)In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 205, no 4, 863-866 p.Article in journal (Refereed) Published
Abstract [en]

MnAs layers with a 5 nm thick amorphous GaAs capping layer were grown epitaxially on GaAs(001). Generalized ellipsometric measurements were made on a 45 nm thick layer in the spectral range 1.5–4 eV at temperatures between –10 °C and 50 °C in steps of 5 °C. By using both the diagonal and off-diagonal elements of the Jones matrix, the in-plane unixial anisotropy of MnAs was determined in terms of the ordinary and extraordinary complex dielectric functions. The measurements at each temperature could be well reproduced by modeling using the optical properties of the two limiting phases α-MnAs and β-MnAs determined at –10 °C and 50 °C, respectively. The best sensitivity to the volume fractions of the two phases was obtained near 2.2 eV by monitoring the generalized ellipsometric parameter Δp for which the variations reached 30°.

Place, publisher, year, edition, pages
Wiley-VCH Verlagsgesellschaft, 2008. Vol. 205, no 4, 863-866 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-42728DOI: 10.1002/pssa.200777783ISI: 000255702600034Local ID: 68440OAI: oai:DiVA.org:liu-42728DiVA: diva2:263585
Conference
4th International Conference on Spectroscopic Ellipsometry (ICSE 4), Stockholm, Sweden, 11–15 June 2007
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Arwin, Hans

Search in DiVA

By author/editor
Arwin, Hans
By organisation
Applied Optics The Institute of Technology
In the same journal
Physica Status Solidi (a) applications and materials science
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 66 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf