liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
Advances in Light emitting Materials
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2008 (English)Collection (editor) (Other academic)
Abstract [en]

  This special-topic volume‚ Advances in Light-Emitting Materials’, makes an important contribution to the field of silicon and III-nitride semiconductors. It begins with a brief history of visible-light emitting diodes. However, silicon is currently expanding from micro-electronics and into photonics. Due to its unsuitable band-gap, it has not previously been the material-of-choice for opto-electronic integration. That is now beginning to change and silicon devices have been developed which have the capability to emit, modulate, guide and detect light and which can be combined with microelectronics to form electronic and photonic integrated circuits.                   read more...

In particular, the performance of silicon-based light-emitters has made rapid progress during the last few years: the first paper describes the potential value of the D-band luminescence caused by dislocations in silicon and its use in infra-red light-emitters. Silicon-wafer direct-bonding, which  permits the controlled formation of dislocation networks, is described in detail in the next paper. Silicon and silicon-germanium light-emitting diodes (LED), which emit band-to-band radiation, are then described. This paper is followed by observations on the effect of carrier-confinement on the emission of the band-to-band radiation of LEDs fabricated in silicon-on-insulator form. Finally, MOS light-emitting devices, based upon rare-earth ion-implantation, are described. These structures exhibit efficient electroluminescence within the wavelengths ranging from UV to visible light.

Altogether, this volume presents an in-depth review of this important topic.

Place, publisher, year, edition, pages
Materials Science Forum Vol 590: Trans Tech Publications , 2008. , 288 p.
National Category
Natural Sciences
URN: urn:nbn:se:liu:diva-43155DOI: 10.4028/ ID: 72199ISBN: 978-0-87849-358-6OAI: diva2:264013
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2014-11-24Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textlink

Search in DiVA

By author/editor
Monemar, Bo
By organisation
The Institute of TechnologySemiconductor Materials
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 51 hits
ReferencesLink to record
Permanent link

Direct link