Downscaling of Organic Field-Effect Transistors with a Polyelectrolyte Gate Insulator
2008 (English)In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 20, no 24, 4708-4713 p.Article in journal (Refereed) Published
A polyelectrolyte is used as gate insulator material in organic field-effect transistors with self-aligned inkjet printed sub–micrometer channels. The small separation of the charges in the electric double layer at the electrolyte-semiconductor interface, which builds up in tens of microseconds, provides a very high transverse electric field in the channel that effectively suppresses short-channel effects at low applied gate voltages.
Place, publisher, year, edition, pages
Wiley Online , 2008. Vol. 20, no 24, 4708-4713 p.
Nanotechnology, Organic electronics, Organic field-effect transistors, Polyelectrolytes, Printed electronics
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-43272DOI: 10.1002/adma.200801756Local ID: 73282OAI: oai:DiVA.org:liu-43272DiVA: diva2:264131