3.3 kV-10A 4H-SiC PiN diodes
2009 (English)In: Materials Science Forum, Vols. 600-603, Trans Tech Publ. , 2009, 991-994 p.Conference paper (Refereed)
An innovative process has been developed by Linköping University to prepare the 4HSiC substrate surface before epitaxial growth. The processed PiN diodes have been characterized in forward and reverse mode at different temperature. The larger diodes (2.56 mm2) have a very low leakage current around 20 nA @ 500V for temperatures up to 300°C. A performant yield (68%) was obtained on these larger diodes have a breakdown voltage superior to 500V. Electroluminescence characteristics have been done on these devices and they show that there is no generation of Stacking Faults during the bipolar conduction.
Place, publisher, year, edition, pages
Trans Tech Publ. , 2009. 991-994 p.
IdentifiersURN: urn:nbn:se:liu:diva-43429DOI: 10.4028/www.scientific.net/MSF.600-603.991Local ID: 73832OAI: oai:DiVA.org:liu-43429DiVA: diva2:264288
12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007; Otsu; Japan