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The effect of the temperature on the bipolar degradation of 3.3 kV 4H-SiC PiN diodes
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2008 (English)In: 20th International Symposium on Power Semiconductor Devices ICs,2008, Proceedings of the 20th International Symposium on Power Semiconductor Devices & ICs: Institute of Electrical and Electronics Engineers ( IEEE ) , 2008, 237- p.Conference paper, Published paper (Refereed)
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Proceedings of the 20th International Symposium on Power Semiconductor Devices & ICs: Institute of Electrical and Electronics Engineers ( IEEE ) , 2008. 237- p.
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URN: urn:nbn:se:liu:diva-43431Local ID: 73834OAI: oai:DiVA.org:liu-43431DiVA: diva2:264290
Available from: 2009-10-10 Created: 2009-10-10

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ul-Hassan, JawadBergman, Peder

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