Optical properties of metastable shallow acceptors in Mg-doped GaN layers grown by metal-organic vapor phase epitaxy
2010 (English)In: AIP Conference Proceedings, AIP , 2010, Vol. 1199, 110-111 p.Conference paper (Refereed)
GaN layers doped by Mg show a metastable behavior of the near-band-gap luminescence caused by electron irradiation or UV excitation. At low temperatures < 30 K the changes in luminescence are permanent. Heating to room temperature recovers the initial low temperature spectrum shape completely. Two acceptors are involved in the recombination process as confirmed by transient PL. In as-grown samples a possible candidate for the metastable acceptor is C-N, while after annealing a second more stable acceptor related to Mg became active.
Place, publisher, year, edition, pages
AIP , 2010. Vol. 1199, 110-111 p.
GaN, Mg-doped, metastability, shallow acceptors
National CategoryCondensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-43434DOI: 10.1063/1.3295320ISI: 000281590800051Local ID: 73839ISBN: 978-073540736-7OAI: oai:DiVA.org:liu-43434DiVA: diva2:264293
29th International Conference on Physics of Semiconductors, ICPS 29; Rio de Janeiro; Brazil
FunderSwedish Energy AgencySwedish Research Council