liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Optical properties of metastable shallow acceptors in Mg-doped GaN layers grown by metal-organic vapor phase epitaxy
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0002-9840-7364
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0002-2597-3322
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya.
Show others and affiliations
2010 (English)In: AIP Conference Proceedings, AIP , 2010, Vol. 1199, 110-111 p.Conference paper, Published paper (Refereed)
Abstract [en]

GaN layers doped by Mg show a metastable behavior of the near-band-gap luminescence caused by electron irradiation or UV excitation. At low temperatures < 30 K the changes in luminescence are permanent. Heating to room temperature recovers the initial low temperature spectrum shape completely. Two acceptors are involved in the recombination process as confirmed by transient PL. In as-grown samples a possible candidate for the metastable acceptor is C-N, while after annealing a second more stable acceptor related to Mg became active.

Place, publisher, year, edition, pages
AIP , 2010. Vol. 1199, 110-111 p.
Keyword [en]
GaN, Mg-doped, metastability, shallow acceptors
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-43434DOI: 10.1063/1.3295320ISI: 000281590800051Local ID: 73839ISBN: 978-073540736-7 (print)OAI: oai:DiVA.org:liu-43434DiVA: diva2:264293
Conference
29th International Conference on Physics of Semiconductors, ICPS 29; Rio de Janeiro; Brazil
Funder
Swedish Energy AgencySwedish Research Council
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2015-09-22Bibliographically approved

Open Access in DiVA

fulltext(318 kB)37 downloads
File information
File name FULLTEXT01.pdfFile size 318 kBChecksum SHA-512
f38914f1ad44645dc71e6fc925703b7c60ac7e43446e23779bbfc274bf29b7cc53c97a7356bd681d2f0220bb907b65f2a6926cc81f54261ab39e5a95bd5a8e90
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Authority records BETA

Pozina, GaliaHemmingsson, CarlBergman, PederMonemar, Bo

Search in DiVA

By author/editor
Pozina, GaliaHemmingsson, CarlBergman, PederMonemar, Bo
By organisation
The Institute of TechnologyThin Film PhysicsSemiconductor Materials
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar
Total: 37 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
isbn
urn-nbn

Altmetric score

doi
isbn
urn-nbn
Total: 92 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf