Highly doped p-type 3C-SiC on 6H-SiC substrates
2008 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 23, no 7Article in journal (Refereed) Published
Highly doped p-3C-SiC layers of good crystal perfection have been grown by sublimation epitaxy in vacuum. Analysis of the photoluminescence spectra and temperature dependence of the carrier concentration shows that at least two types of acceptor centers at ∼EV + 0.25 eV and at EV + 0.06-0.07 eV exist in the samples studied. A conclusion is reached that layers of this kind can be used as p-emitters in 3C-SiC devices. © 2008 IOP Publishing Ltd.
Place, publisher, year, edition, pages
2008. Vol. 23, no 7
IdentifiersURN: urn:nbn:se:liu:diva-43437DOI: 10.1088/0268-1242/23/7/075004Local ID: 73843OAI: oai:DiVA.org:liu-43437DiVA: diva2:264296