Features of hot hole transport in 6H-SiC
2009 (English)In: ECSCRM2008,2008, Materials Science Forum Vols. 615-617: Trans Tech Publications , 2009, 307-310 p.Conference paper (Refereed)
In materials with a small degree of ionicity ranging 10-15%, such as in SiC, carrier scattering on polar optical potential is possible. Unlike scattering on deformation potential, the drift mobility in this case increases continuously. As this phenomenon may be realized in SiC hot hole transport, I-F characteristics in 6H-SiC with Na-Nd ~ 5x1017 cm-3 have been studied at electrical field 1-150 kV/cm for temperature from 300 to 600K. Furthermore, we studied the breakdown of Al impurity.
Place, publisher, year, edition, pages
Materials Science Forum Vols. 615-617: Trans Tech Publications , 2009. 307-310 p.
IdentifiersURN: urn:nbn:se:liu:diva-43443DOI: 10.4028/www.scientific.net/MSF.615-617.307Local ID: 73853ISBN: 978-087849334-0OAI: oai:DiVA.org:liu-43443DiVA: diva2:264302
7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008; Barcelona; Spain