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P- and n-type doping in SiC sublimation epitaxy using highly doped substrates
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2009 (English)In: ECSCRM2008,2008, Materials Science Forum Vols. 615-617: Trans Tech Publications , 2009, 85-88 p.Conference paper, Published paper (Refereed)
Abstract [en]

The co-doping of nitrogen and aluminum has been studied in the sublimation epitaxy growth process. It is shown that the doping may be tuned from n-type to p-type by effect of substrate doping, growth face and volume of the growth crucible. The co-doped layers show a nearly ideal I V characteristic and luminescence at room temperature.

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Materials Science Forum Vols. 615-617: Trans Tech Publications , 2009. 85-88 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-43444DOI: 10.4028/www.scientific.net/MSF.615-617.85Local ID: 73854ISBN: 978-087849334-0 (print)OAI: oai:DiVA.org:liu-43444DiVA: diva2:264303
Conference
7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008; Barcelona; Spain
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2014-09-04

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Hens, PhilipSyväjärvi, MikaelYakimova, Rositsa

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