P- and n-type doping in SiC sublimation epitaxy using highly doped substrates
2009 (English)In: ECSCRM2008,2008, Materials Science Forum Vols. 615-617: Trans Tech Publications , 2009, 85-88 p.Conference paper (Refereed)
The co-doping of nitrogen and aluminum has been studied in the sublimation epitaxy growth process. It is shown that the doping may be tuned from n-type to p-type by effect of substrate doping, growth face and volume of the growth crucible. The co-doped layers show a nearly ideal I V characteristic and luminescence at room temperature.
Place, publisher, year, edition, pages
Materials Science Forum Vols. 615-617: Trans Tech Publications , 2009. 85-88 p.
IdentifiersURN: urn:nbn:se:liu:diva-43444DOI: 10.4028/www.scientific.net/MSF.615-617.85Local ID: 73854ISBN: 978-087849334-0OAI: oai:DiVA.org:liu-43444DiVA: diva2:264303
7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008; Barcelona; Spain