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Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2009 (English)In: Materials Science Forum, Vols. 615-617, Trans Tech Publications , 2009, 263-266 p.Conference paper, Published paper (Refereed)
Abstract [en]

The paper presents experimental data on the temperature dependence and the excitation properties of the phosphorus-related photoluminescence in 4H SiC. Two main sets of phonon replicas can be observed with selective excitation, which are attributed to two of the no-phonon lines observed in the spectrum. Some of the excited states are also attributed to one of the no-phonon lines on the ground of the selectively excited spectra. A tentative explanation of the observed features in terms of multiple bound excitons is proposed.

Place, publisher, year, edition, pages
Trans Tech Publications , 2009. 263-266 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-43455DOI: 10.4028/www.scientific.net/MSF.615-617.263Local ID: 73892ISBN: 978-087849334-0 (print)OAI: oai:DiVA.org:liu-43455DiVA: diva2:264314
Conference
7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008; Barcelona; Spain
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2014-10-08

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Ivanov, Ivan Gueorguievul-Hassan, JawadHenry, AnneJanzén, Erik

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