Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC
2009 (English)In: Materials Science Forum, Vols. 615-617, Trans Tech Publications , 2009, 263-266 p.Conference paper (Refereed)
The paper presents experimental data on the temperature dependence and the excitation properties of the phosphorus-related photoluminescence in 4H SiC. Two main sets of phonon replicas can be observed with selective excitation, which are attributed to two of the no-phonon lines observed in the spectrum. Some of the excited states are also attributed to one of the no-phonon lines on the ground of the selectively excited spectra. A tentative explanation of the observed features in terms of multiple bound excitons is proposed.
Place, publisher, year, edition, pages
Trans Tech Publications , 2009. 263-266 p.
IdentifiersURN: urn:nbn:se:liu:diva-43455DOI: 10.4028/www.scientific.net/MSF.615-617.263Local ID: 73892ISBN: 978-087849334-0OAI: oai:DiVA.org:liu-43455DiVA: diva2:264314
7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008; Barcelona; Spain