EPR identification of intrinsic defects in SiC
2008 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, Vol. 245, no 7, 1298-1314 p.Article in journal (Refereed) Published
The structure determination of intrinsic defects in 4H-SiC, 6H-SiC, and 3C-SiC by means of EPR is based on measuring the angular dependence of the 29Si/13C hyperfine (HF) satellite lines, from which spin densities, sp-hybrid ratio, and p-orbital direction can be determined over major atoms comprising a defect. In most cases, not only the assignment of the variety due to the inequivalent sites (h- and k-sites in 4H-SiC) but also the identification of the defect species is accomplished through the comparison of the obtained HF parameters with those obtained from first principles calculations. Our works of identifying vacancy-related defects such as the monovacancies, divacancies, and antisite-vacancy pairs in 4H-SiC are reviewed. In addition, it is demonstrated that the observation of the central line of the TV2a center of S = 3/2 has been achieved by pulsed-ELDOR. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.
Place, publisher, year, edition, pages
2008. Vol. 245, no 7, 1298-1314 p.
IdentifiersURN: urn:nbn:se:liu:diva-43503DOI: 10.1002/pssb.200844209Local ID: 73990OAI: oai:DiVA.org:liu-43503DiVA: diva2:264362