Defects introduced by electron-irradiation at low temperatures in SiC
2009 (English)In: Materials Science Forum Vols. 615-617, Trans Tech Publicarions , 2009, 377-380 p.Conference paper (Refereed)
Defects introduced by electron irradiation at ~80-100 K in 3C-, 4H- and 6H-SiC were studied by electron paramagnetic resonance (EPR). A number of EPR spectra, labelled LE1-10, were detected. Combining EPR and supercell calculations, we will show that the LE1 center in 3C-SiC with C2v symmetry and an electron spin S=3/2 is related to the (VSi-Sii)3+ Frenkel pair between the silicon vacancy and a second neighbour Sii interstitial along the <100> direction. Results on other centers, possibly also related to interstitials, are discussed.
Place, publisher, year, edition, pages
Trans Tech Publicarions , 2009. 377-380 p.
IdentifiersURN: urn:nbn:se:liu:diva-43504DOI: 10.4028/www.scientific.net/MSF.615-617.377Local ID: 73991ISBN: 978-087849334-0OAI: oai:DiVA.org:liu-43504DiVA: diva2:264363
7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008; Barcelona; Spain