Performance of SiC Microwave Transistors in Power Amplifiers
2008 (English)In: Proc. of MRS Symposium on wide bandgap semiconductor electronics 8, 2008, 203-208 p.Conference paper (Refereed)
The performance of SiC microwave power transistors is studied in fabricated class-AB power amplifiers and class-C switching power amplifier using physical structure of an enhanced version of previously fabricated and tested SiC MESFET. The results for pulse input in class-C at 1 GHz are; efficiency of 71.4 %, power density of 1.0 W/mm. The switching loss was 0.424 W/mm. The results for two class-AB power amplifiers are; the 30-100 MHz amplifier showed 45.6 dBm (∼ 36 W) output powers at P1dB, at 50 MHz. The power added efficiency (PAE) is 48 % together with 21 dB of power gain. The maximum output power at P1dB at 60 V drain bias and Vg= -8.5 V was 46.7 dBm (∼47 W). The typical results obtained in 200-500 MHz amplifier are; at 60 V drain bias the P1dB is 43.85 dBm (24 W) except at 300 MHz where only 41.8 dBm was obtained. The maximum out put power was 44.15 dBm (26 W) at 500 MHz corresponding to a power density of 5.2 W/mm. The PAE @ P1dB [%] at 500 MHz is 66 %.
Place, publisher, year, edition, pages
2008. 203-208 p.
IdentifiersURN: urn:nbn:se:liu:diva-43516DOI: 10.1557/PROC-1069-D10-05Local ID: 74039ISBN: 978-160511039-4OAI: oai:DiVA.org:liu-43516DiVA: diva2:264375
MRS Symposium on wide bandgap semiconductor electronics 8,2008