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High-phase-purity zinc-blende InN on r -plane sapphire substrate with controlled nitridation pretreatment
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2008 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 92, no 11Article in journal (Refereed) Published
Abstract [en]

High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r -plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ∼0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors. © 2008 American Institute of Physics.

Place, publisher, year, edition, pages
2008. Vol. 92, no 11
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Natural Sciences
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URN: urn:nbn:se:liu:diva-43524DOI: 10.1063/1.2898214Local ID: 74079OAI: oai:DiVA.org:liu-43524DiVA: diva2:264383
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Gällström, AndreasHoltz, Per-Olof

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