liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
High-phase-purity zinc-blende InN on r -plane sapphire substrate with controlled nitridation pretreatment
Show others and affiliations
2008 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 92, no 11Article in journal (Refereed) Published
Abstract [en]

High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r -plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ∼0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors. © 2008 American Institute of Physics.

Place, publisher, year, edition, pages
2008. Vol. 92, no 11
National Category
Natural Sciences
URN: urn:nbn:se:liu:diva-43524DOI: 10.1063/1.2898214Local ID: 74079OAI: diva2:264383
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2011-01-10

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Gällström, AndreasHoltz, Per-Olof
By organisation
The Institute of TechnologyMaterials Science
In the same journal
Applied Physics Letters
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 55 hits
ReferencesLink to record
Permanent link

Direct link