The Silicon vacancy in SiC
2009 (English)In: / [ed] Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard, Trans Tech Publications Inc., 2009, Vol. 615-617, 347-352 p.Conference paper (Refereed)
A model is presented for the silicon vacancy in SiC. The previously reported photoluminescence spectra in 4H and 6H SiC attributed to the silicon vacancy are in this model due to internal transitions in the negative charge state of the silicon vacancy. The magnetic resonance signals observed are due to the initial and final states of these transitions.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2009. Vol. 615-617, 347-352 p.
silicon vacancy, ODMR, EPR, photoluminescence
IdentifiersURN: urn:nbn:se:liu:diva-43525DOI: 10.4028/www.scientific.net/MSF.615-617.347Local ID: 74080OAI: oai:DiVA.org:liu-43525DiVA: diva2:264384
7th European Conference on Silicon Carbide and Related Materials, ECSCRM2008, Barcelona Spain, 7-11 September 2008