Chloride-based SiC epitaxial growth
2009 (English)In: Materials Science Forum Vols. 615-617, Trans Tech Publications , 2009, 89- p.Conference paper (Refereed)
Some aspects of the chloride-based CVD growth process have been investigated by using both the approach to add HCl to the standard precursors or/and by using the single molecule precursor methyltrichlorosilane (MTS). The efficiency of the process for different precursors, the growth rate stability and the effect that the Cl/Si-ratio has on the growth have been studied. MTS is showed to be the most efficient precursor; the growth can be hindered by to much chlorine in the gas mixture. The Cl/Si-ratio is also found to be a process parameter that affects the amount of incorporated nitrogen in the epilayers.
Place, publisher, year, edition, pages
Trans Tech Publications , 2009. 89- p.
IdentifiersURN: urn:nbn:se:liu:diva-43526DOI: 10.4028/www.scientific.net/MSF.615-617.89Local ID: 74084OAI: oai:DiVA.org:liu-43526DiVA: diva2:264385