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Chloride-based SiC epitaxial growth
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0002-7171-5383
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2009 (English)In: Materials Science Forum Vols. 615-617, Trans Tech Publications , 2009, 89- p.Conference paper, Published paper (Refereed)
Abstract [en]

Some aspects of the chloride-based CVD growth process have been investigated by using both the approach to add HCl to the standard precursors or/and by using the single molecule precursor methyltrichlorosilane (MTS). The efficiency of the process for different precursors, the growth rate stability and the effect that the Cl/Si-ratio has on the growth have been studied. MTS is showed to be the most efficient precursor; the growth can be hindered by to much chlorine in the gas mixture. The Cl/Si-ratio is also found to be a process parameter that affects the amount of incorporated nitrogen in the epilayers.

Place, publisher, year, edition, pages
Trans Tech Publications , 2009. 89- p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-43526DOI: 10.4028/www.scientific.net/MSF.615-617.89Local ID: 74084OAI: oai:DiVA.org:liu-43526DiVA: diva2:264385
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ECSCRM2008
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2015-03-11

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Pedersen, HenrikLeone, StefanoHenry, AnneBeyer, FranziskaLundskog, AndersJanzén, Erik

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