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Growth of Thick 4H-SiC Epitaxial Layers on On-axis Si-Face Substrates with HCl Addition
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0002-7171-5383
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
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2009 (English)In: Materials Science Forum, Vols. 615-617, Trans Tech Publications , 2009, 93-96 p.Conference paper, Published paper (Refereed)
Abstract [en]

Homoepitaxial growth of 4H-SiC on on-axis Si-face substrates is reported using hydrogen chloride together with silane and ethylene. In this study, the main process parameters, such as temperature, Cl/Si ratio, C/Si ratio, Si/H2 ratio and ramp up conditions, were studied in detail to understand their effects on the growth mechanisms. Two different optimal epitaxial growth conditions were found. Silicon rich conditions and a high Cl/Si ratio were the key parameters to grow thick homoepitaxial layers with a very low background doping concentration and a growth rate higher than 20 μm/h.

Place, publisher, year, edition, pages
Trans Tech Publications , 2009. 93-96 p.
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Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-43528DOI: 10.4028/www.scientific.net/MSF.615-617.93Local ID: 74086OAI: oai:DiVA.org:liu-43528DiVA: diva2:264387
Conference
ECSCRM2008
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2015-03-11

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Leone, StefanoPedersen, HenrikHenry, AnneKordina, OlleJanzén, Erik

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