Growth of Thick 4H-SiC Epitaxial Layers on On-axis Si-Face Substrates with HCl Addition
2009 (English)In: Materials Science Forum, Vols. 615-617, Trans Tech Publications , 2009, 93-96 p.Conference paper (Refereed)
Homoepitaxial growth of 4H-SiC on on-axis Si-face substrates is reported using hydrogen chloride together with silane and ethylene. In this study, the main process parameters, such as temperature, Cl/Si ratio, C/Si ratio, Si/H2 ratio and ramp up conditions, were studied in detail to understand their effects on the growth mechanisms. Two different optimal epitaxial growth conditions were found. Silicon rich conditions and a high Cl/Si ratio were the key parameters to grow thick homoepitaxial layers with a very low background doping concentration and a growth rate higher than 20 μm/h.
Place, publisher, year, edition, pages
Trans Tech Publications , 2009. 93-96 p.
IdentifiersURN: urn:nbn:se:liu:diva-43528DOI: 10.4028/www.scientific.net/MSF.615-617.93Local ID: 74086OAI: oai:DiVA.org:liu-43528DiVA: diva2:264387