Single Crystal and Polycrystalline 3C-SiC for MEMS Applications
2009 (English)In: Materials Science Forum Vols. 615-617, Trans Tech Publications , 2009, 625-628 p.Conference paper (Refereed)
Cantilever resonators have been fabricated from two types of materials, single crystal and polycrystalline 3C-SiC films. The films have been grown in a hot-wall chemical vapor deposition reactor on 100 mm diameter p-type boron-doped (100) Si wafer without rotation of the wafer. The crystal structure of the films have been accessed with X-ray diffraction. The cantilever devices have been fabricated using a one-step etch and release process; the beam length has been varied between 50 and 200 µm. Resonant frequencies in the range 110 KHz – 1.5 MHz and 50 – 750 KHz have been obtained for single crystal and polycrystalline SiC devices, respectively. Furthermore, the experimental resonance frequencies have been used to calculate the Young’s Modulus E for the two different types of SiC. The single crystal SiC, possessing a very high Young’s Modulus (446 GPa), should be an optimal material for RF-MEMS applications.
Place, publisher, year, edition, pages
Trans Tech Publications , 2009. 625-628 p.
IdentifiersURN: urn:nbn:se:liu:diva-43530DOI: 10.4028/www.scientific.net/MSF.615-617.625Local ID: 74091ISBN: 978-087849334-0OAI: oai:DiVA.org:liu-43530DiVA: diva2:264389
7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008; Barcelona; Spain