P-type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates
2009 (English)In: ECSCRM2008,2008, Materials Science Forum Vols. 615-617: Trans Tech Publications , 2009, 177-180 p.Conference paper (Refereed)
Highly doped p-3C-SiC layers of good crystal perfection have been grown by sublimation epitaxy in vacuum. Analysis of the photoluminescence (PL) spectra and temperature dependence of the carrier concentration shows that at least two types of acceptor centers at ~EV + 0.25 eV and at EV + 0.06-0.07 eV exist in the samples studied. A conclusion is made that layers of this kind can be used as p-emitters in 3C-SiC devices.
Place, publisher, year, edition, pages
Materials Science Forum Vols. 615-617: Trans Tech Publications , 2009. 177-180 p.
IdentifiersURN: urn:nbn:se:liu:diva-43534DOI: 10.4028/www.scientific.net/MSF.615-617.177Local ID: 74096ISBN: 978-087849334-0OAI: oai:DiVA.org:liu-43534DiVA: diva2:264393
7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008; Barcelona; Spain